Electronic Structure of Fibonacci Si Δ-doped Gaas Typeset Using Revt E X 1
نویسنده
چکیده
We study the electronic structure of a new type of Fibonacci superlattice based on Si δ-doped GaAs. Assuming that δ-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to δ-doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope-functions.
منابع مشابه
X-ray Photoemission Study of Nis 2−x Se X (x = 0.0 -1.2) Typeset Using Revt E X 1
Electronic structure of NiS2−xSex system has been investigated for various compositions (x) using x-ray photoemission spectroscopy. An analysis of the core level as well as the valence band spectra of NiS2 in conjunction with many-body cluster calculations provides a quantitative description of the electronic structure of this compound. With increasing Se content, the on-site Coulomb correlatio...
متن کاملElectronic structure and thermochemical properties of silicon-doped lithium clusters LinSi0/+, n = 1-8: New insights on their stability
A theoretical investigation on small silicon-doped lithium clusters Li(n)Si with n = 1-8, in both neutral and cationic states is performed using the high accuracy CCSD(T)/complete basis set (CBS) method. Location of the global minima is carried out using a stochastic search method and the growth pattern of the clusters emerges as follows: (i) the species Li(n)Si with n ≤ 6 are formed by directl...
متن کاملInteresting Magnetic Properties of Fe 1−x Co X Si Alloys Typeset Using Revt E X
Solid solution between nonmagnetic narrow gap semiconductor FeSi and diamagnetic semi-metal CoSi gives rise to interesting metallic alloys with longrange helical magnetic ordering, for a wide range of intermediate concentration. We report various interesting magnetic properties of these alloys, including low temperature re-entrant spin-glass like behaviour and a novel inverted magnetic hysteres...
متن کاملGennes-Saint-James resonant transport in Nb/GaAs/AlGaAs heterostructures
Resonant transport is demonstrated in a hybrid superconductorsemiconductor heterostructure junction grown by molecular beam epitaxy on GaAs. This heterostructure realizes the model system introduced by de Gennes and Saint-James in 1963 [P. G. de Gennes and D. Saint-James, Phys. Lett. 4, 151 (1963)]. At low temperatures a single marked resonance peak is shown superimposed to the characteristic A...
متن کاملMutual passivation of electrically active and isovalent impurities.
The alloy GaN(x) As(1-x) (with x typically less than 0.05) is a novel semiconductor that has many interesting electronic properties because of the nitrogen-induced dramatic modifications of the conduction band structure of the host material (GaAs). Here we demonstrate the existence of an entirely new effect in the GaN(x) As(1-x) alloy system in which the Si donor in the substitututional Ga site...
متن کامل